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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.25 No.2
- 발행연도
- 2025.4
- 수록면
- 117 - 122 (6page)
- DOI
- 10.5573/JSTS.2025.25.2.117
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초록· 키워드
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Recently, GeSn has been identified as a promising candidate for group-IV-driven electronic and photonic devices owing to its high carrier mobility and indirect-to-direct bandgap transition property. In this work, a comprehensive study of primary material characteristics, including electron affinity, bandgap energies at local minimum valleys, and effective density of states (DOS) of the GeSn alloy, has been conducted as a function of Sn fraction and in-volume stress. As the Sn fraction increases, leading to the transition from an indirect-to-direct bandgap, the electron affinity rises sharply, while the energy bandgap and the effective DOS decrease. Based on these material parameters, an n-type metal-oxide-semiconductor field-effect transistor has been designed and optimized in terms of DC parameters and high-frequency performance as a function of Sn fraction and the corresponding in-volume biaxial stress in the channel region. As tensile stress or Sn fraction increases, both the on-state (Ion) and off-state currents (Ioff) rise due to a narrowed bandgap energy, while the subthreshold swing (S) value also degrades. In contrast, compressive strain reduces Ioff. Finally, the incorporation of GeSn channel is reported to be advantageous for high-speed operation.
목차
Abstract
I. INTRODUCTION
II. FIRST-PRINCIPLE SIMULATION STRATEGY
III. RESULTS AND DISCUSSION
IV. CONCLUSION
REFERENCES
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