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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.16 No.6
- 발행연도
- 2016.12
- 수록면
- 854 - 859 (6page)
이용수
초록· 키워드
오류제보하기
Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of 250°C and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENTS
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (20)
참고문헌 신청
W. V. Heddeghem / 2014 / Trends in worldwide ICT electricity consumption from 2007to 2012 / Comput. Commun 50(1):64~76
J. Liu / 2012 / Ge-on-Si optoelectronics / Thin Solid Films 520(8):3354~3360
L. C. Kimerling / Microphotonics:The Next Platform for the Information Age
J. Liu / 2014 / Monolithically integrated Ge-on-Si active photonics / Photonics 1(3):162~197
X. Wang / 2013 / Infrared absorption of n-type tensile-strained Ge-on-Si / Opt. Lett 38(5):652~654
J. Liu / 2012 / Ge-on-Si optoelectronics / Thin Solid Films 520(8):3354~3360
L. C. Kimerling / Microphotonics:The Next Platform for the Information Age
J. Liu / 2014 / Monolithically integrated Ge-on-Si active photonics / Photonics 1(3):162~197
X. Wang / 2013 / Infrared absorption of n-type tensile-strained Ge-on-Si / Opt. Lett 38(5):652~654
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UCI(KEPA) : I410-ECN-0101-2017-569-001935114