The Low Temperature Epitaxy of Strained GeSn layers using RTCVD system

길연호; Sim‑Hoon Yuk; Han‑Soo Jang; Sang‑Geul Lee; Chel‑Jong Choi; Kyu‑Hwan Shim

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자료유형: 학술저널

저자정보: 길연호 (Chonbuk National University) Sim‑Hoon Yuk (Chonbuk National University) Han‑Soo Jang (Chonbuk National University) Sang‑Geul Lee (Korea Basic Science Institute (KBSI) Daegu Center) Chel‑Jong Choi (Chonbuk National University) Kyu‑Hwan Shim (Chonbuk National University)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.14 No.2

발행연도: 2018.1

수록면: 207 - 213 (7page)

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We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor depositionsystem utilizing Ge2H6and SnCl4as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Snsegregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found thatthe SnCl4promoted the reaction of Ge2H6precursors in a certain process condition of LT, 240–360 °C. In return, we couldperform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagateddefects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculatethe activation energies at lower GeSn growth temperature regime using by Ge2H6and SnCl4precursors about 0.43 eV.

참고문헌 (20)

참고문헌 신청

Mark S. Romano / 2015 / Nano-Carbon Electrodes for Thermal Energy Harvesting / Journal of Nanoscience and Nanotechnology 15(1):1~14

Moontragoon, P / 2007 / Band structure calculation of Si-Ge-Sn alloys: Achieving direct band gap materials / Semicond. Sci. Technol. 22:742

C. D. Thurmond / 1956 / Germanium Solidus Curves / The Journal of Chemical Physics 25(4):799~800

R. R. Lieten / 2013 / Tensile strained GeSn on Si by solid phase epitaxy / Applied Physics Letters 102(5):052106

Taizoh Sadoh / 2016 / High Sn-concentration (~8%) GeSn by low-temperature (~150°C) solid-phase epitaxy of a-GeSn/c-Ge / Thin Solid Films 602:20~23

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길연호

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주요연구분야 공학 > 전기전자공학 > 전자공학 공학 > 재료·에너지공학 > 재료공학

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Sim‑Hoon Yuk

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