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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials Vol.25 No.3
- 발행연도
- 2024.6
- 수록면
- 356 - 364 (9page)
- DOI
- 10.1007/s42341-024-00518-3
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초록· 키워드
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The present study of the structural and electrical properties of chalcogenide especially un doped, Ag and Cu dopedCd 0.75 Se 0.25 bulk material. Chalcogenide-materials and II-VI group semiconductors have been found as useful materials for application in the huge span of semiconductor’s electronics and optoelectronics. The Electrical properties have been discussed for bulk material. Bulk material formation from Melt-quenching technique is more useful for thin fi lm formation. XRD, Table top Hall Eff ect, Four Probe measurements and SEM results are described in this paper. Through these characterization, optimizing the resistivity, conductivity, type of semiconductor and mobility of the Cd 0.75 Se 0.25 balk material. It has also been found that quantum confi nement is exhibited in this type of semiconductor at nanoscale.
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