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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제21권 제3호
- 발행연도
- 2020.1
- 수록면
- 235 - 248 (14page)
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초록· 키워드
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Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for fl at panel display, active matrix organic light emitting display, active matrix liquid crystal display as well as thin fi lm electronic devices due to their excellent electrical characteristics, such as fi eld eff ect mobility ( μ FE ), subthreshold swing ( SS ) and threshold voltage ( V th ). Researchers from various fi elds have studied and considered ways to improve μ FE of AOS TFT, which has been studied for 16 years since 2004. Since 2004, mobility has been increased by using various methods, such as designing novel amorphous oxide materials, changing device structures, or adopting new post-treatment. The development of field eff ect mobility as well as the stability enhancement has been comprehensively reviewed in this report.
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참고문헌 (48)
참고문헌 신청
M. H. Devoret / 2013 / Science 339:1169
M. Mohseni / 2017 / Nature 543:171
Jayapal Raja / 2015 / Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review / Transactions on Electrical and Electronic Materials 16(5):234~240
T. G. Lee / 2019 / J. Eur. Ceram. Soc 39:973
K. Nomura / 2004 / Nature 432:488
M. Mohseni / 2017 / Nature 543:171
Jayapal Raja / 2015 / Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review / Transactions on Electrical and Electronic Materials 16(5):234~240
T. G. Lee / 2019 / J. Eur. Ceram. Soc 39:973
K. Nomura / 2004 / Nature 432:488
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