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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2022.4
- 수록면
- 191 - 195 (5page)
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초록· 키워드
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We investigate the lateral far-field pattern characteristics, including divergence angle change and far-field pattern analysis as output power increases, of narrow-emitter-width 850 ㎚ GaAs/AlGaAs laser diodes (LDs). Each LD has a cavity of 1200 and 1500 ㎛ and narrow emitter width of 2.4 ㎛ for the top and 4.6 ㎛ for the bottom. The threshold currents are 35 and 40 ㎃, and L-I kinks appear at power levels of 326 and 403 ㎽, respectively. The divergence angle tends to increase due to the occurrence of first-order lateral mode and the thermal lensing effect. But with the L-I kink, the divergence angle decreases and the far-field pattern becomes asymmetric. This is due to coherent superposition between the fundamental and the first-order lateral mode. We provide detailed explanations for these observations based on high-power laser diode simulation results.
목차
Ⅰ. INTRODUCTION
Ⅱ. DEVICE STRUCTURE AND L-I CHARACTERISTICS
Ⅲ. LATERAL FAR-FIELD CHARACTERISTICS
Ⅳ. CONCLUSION
REFERENCES
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