지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.32 No.1
- 발행연도
- 2023.1
- 수록면
- 12 - 15 (4page)
이용수
초록· 키워드
오류제보하기
The effects of annealing temperature on optical properties for low-temperature growth (LTG) GaAs/AlGaAs quantum dots (QD) were investigated in this study. The LTG GaAs QDs were annealed at temperature of 650, 700, and 750 ∘C. From the photoluminescence (PL) results, we found that the PL intensity was enhanced as the annealing temperature was increased and the emission wavelength blue-shifted with increasing annealing temperature. We confirmed that the crystal quality of LTG QD could be improved due to the thermal quarrying effect. The GaAs QD size could be smaller due to Ga out-diffusion and Al inter-diffusion during the thermal annealing process. In photoreflectance spectra, the Franz-Keldysh oscillations above the GaAs band gap become stronger with increasing annealing temperature. The interface electric field strength also increases due to the decrease in the defect density. We thus found that the defect density could be decreased by increasing the annealing temperature.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Effects of annealing temperature of GaAs/AlGaAs Quantum dots grown by droplet epitaxy
한국진공학회 학술발표회초록집
2020 .08
-
Strain engineering of GaAs/AlGaAs quantum dots grown by droplet epitaxy
한국진공학회 학술발표회초록집
2017 .02
-
Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy
Applied Science and Convergence Technology
2019 .01
-
Effect of Underlayer, CoFeB Composition and Annealing Temperature on Perpendicular Magnetic Anisotropy of CoFeB
한국자기학회 학술연구발표회 논문개요집
2021 .07
-
Investigation of optical properties in a single GaAs coupled quantum dots
한국자기학회 학술연구발표회 논문개요집
2023 .05
-
Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy
Applied Science and Convergence Technology
2017 .07
-
p+-n-n+ 및 n+-n-p+ GaAs 태양전지의 내부 전기장 세기 비교
한국진공학회 학술발표회초록집
2020 .02
-
Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for the application to Quantum Information Processing Devices
Applied Science and Convergence Technology
2015 .11
-
Controlling Al remnants in ‘strain-free’ GaAs/Al0.3Ga0.7As quantum dots grown by droplet epitaxy
한국진공학회 학술발표회초록집
2018 .02
-
Transport properties of Be-doped p-type GaAs films
한국진공학회 학술발표회초록집
2019 .08
-
플렉서블 GaAs 태양전지에서 에픽택셜 리프트 오프 공정 중 형성되는 결함에 대한 연구
새물리
2019 .08
-
Nonlinear dynamics of GaAs thin films using intense THz wave
한국진공학회 학술발표회초록집
2020 .02
-
Excitation Intensity- and Temperature-Dependent Photoluminescence Study of InAs/GaAs Sub-monolayer-Quantum Dot
Applied Science and Convergence Technology
2018 .09
-
Effects of Annealing Temperature on Capacitance-Voltage Characteristics of Al/HfO2/Ge Capacitors
한국진공학회 학술발표회초록집
2018 .08
-
Effect of Annealing Temperature and Annealing Time on Electrical Properties of HfZrO₄ Dielectric
한국진공학회 학술발표회초록집
2019 .08
-
Behavior of Plasma-doped Graphene upon High Temperature Vacuum Annealing
Applied Science and Convergence Technology
2018 .09
-
White Light Emission with Quantum Dots: A Review
Applied Science and Convergence Technology
2016 .01
-
Suppression of Aggregation with Acrylate-Terminated Quantum Dots in the Matrix via Ligand Modification
한국진공학회 학술발표회초록집
2021 .02
-
Effect of Annealing Conditions on the Optical and Structural Properties of Perovskite Films in Ambient Atmosphere
한국진공학회 학술발표회초록집
2021 .02
-
Internal Electric Fields of Flexible GaAs Solar Cells Fabricated Using Epitaxial Lift-off
Applied Science and Convergence Technology
2020 .01
이 논문의 저자 정보
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2023-420-000347362