940-nm 350-mW Transverse Single-mode Laser Diode with AlGaAs/InGaAs GRIN-SCH and Asymmetric Structure

Jeonggeun Kwak; Jongkeun Park; Jeonghyun Park; Kijong Baek; Ansik Choi; Taekyung Kim

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저자정보: Jeonggeun Kwak (Quantum Semiconductor International (QSI)) Jongkeun Park (Quantum Semiconductor International (QSI)) Jeonghyun Park (Quantum Semiconductor International (QSI)) Kijong Baek (Quantum Semiconductor International (QSI)) Ansik Choi (Quantum Semiconductor International (QSI)) Taekyung Kim (Quantum Semiconductor International (QSI))

저널정보: 한국광학회 Current Optics and Photonics Current Optics and Photonics Vol.3 No.6

발행연도: 2019.12

수록면: 583 - 589 (7page)

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We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I<SUB>th</SUB>) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I<SUB>op</SUB>) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60°C with a TO-56 package.

#Laser diode #940 nm laser diode #AlGaAs/InGaAs GRIN-SCH #Asymmetric structure #3D motion recognition light source

참고문헌 (14)

참고문헌 신청

X. Miao / 2018 / Method and system for using light emission by a depth-sensing camera to capture video images under low-light conditions / U.S. Patent 10,009,554

R. K. Price / 2018 / Multi-spectrum illumination-and-sensor module for head tracking, gesture recognition and spatial mapping / U.S. Patent Appl. 15/447064

OSRAM Marketing IR APAC / Wide IR Illumination &Sensing Products from OSRAM / Consumer Applications_Illumination & Sensing

Lumentum Marketing IR / Diode Lasers in Next-Generation 3D Sensing Applications: Meeting the Challenges of Reliability and Scale (MARKETS_3D Sensing_ WHITE PAPER, 2018)

C. T. Hung / 2013 / 830-nm AlGaAs-InGaAs graded index double barrier separate confinement heterostructures laser diodes with improved temperature and divergence characteristics / IEEE J. Quantum Electron 49:127~132

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