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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.30 No.6
- 발행연도
- 2021.11
- 수록면
- 176 - 182 (7page)
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This research involved an experimental investigation of the relationship between the plasma parameters and etching properties of SiO₂ over poly-Si mask in Ar/C₄F<SUB>8</SUB> capacitively coupled plasma (CCP). In these experiments, the etching process was conducted in CCP and the external conditions such as the applied power, pressure, and gas ratio were varied. In addition, the density of radicals, which dominantly participate in surface reactions, the electron density, and the self-bias voltage were measured. As a result, deposition of the CF<SUB>x</SUB> polymer film on the poly-Si mask lowered the electron density and self-bias voltage and the etch rate of the target and the mask increased as the internal parameters of the plasma increased. This result indicated that the electron density and the self-bias voltage, which represent the physical etch elements of ion flux and energy, respectively, have a marked influence on the etching process. Consequently, our work led us to propose a critical value, which is the product of the electron density and self-bias voltage, n<SUB>e</SUB>V<SUB>bias</SUB>, to analyze the etching mechanism. Our results are also expected to serve as a basic processing database that enables an in-depth understanding of etching.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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