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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2015.1
- 수록면
- 424 - 428 (5page)
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Three-layer heterostructures with embedded CrSi2 nanocrystallites were grown using molecular-beam epitaxy. The nanocrystallites have epitaxial orientation to the silicon lattice and are subjected to anisotropic compressive stress in the CrSi2 [001] direction. The thermoelectric power factor of the heterostructure is about 5 times higher than that in the substrate at 300 - 480 K. Taking into consideration the ratio of nanocomposite and substrate thickness, the real power factor is expected to be 2 - 3 orders higher than the measured one and it reaches 3200 μW K−2 m−1 at 470 K.
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