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- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2021.11
- 수록면
- 47 - 47 (1page)
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Mixed-dimensional heterostructures can be utilized as advanced materials for flexible electronics or optoelectronics due to their novel optical and electronic properties. Here we report that we selectively synthesized in-plane 1D-2D metal-semiconductor Mo<SUB>6</SUB>Te<SUB>6</SUB>-MoTe₂ heterostructures, 1D Mo<SUB>6</SUB>Te<SUB>6</SUB> nanowires, and few-layer 2H MoTe₂ films through a Te-flux-controlled chemical vapor deposition method. The composition and phase of Mo/Te compounds are controlled by changing Te atomic flux. The 1D Mo<SUB>6</SUB>Te<SUB>6</SUB> nanowires are synthesized at low Te flux whereas few-layer 2H MoTe₂ films are obtained at high Te flux. Interestingly, in-plane 1D-2D metal-semiconductor Mo<S ... 전체 초록 보기
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