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논문 기본 정보

자료유형
학술저널
저자정보
Ruiguang Ning (Electronic Materials Research Center Korea Institute of Science and Technology (KIST)) Soo Young Jung (KIST School Korea University) Haneul Choi (Advanced Analysis and Data Center Korea Institute of Science and Technology (KIST)) Byeong-hyeon Lee (Advanced Analysis and Data Center Korea Institute of Science and Technology (KIST)) Min-Seok Kim (Electronic Materials Research Center Korea Institute of Science and Technology (KIST)) Hyung-Jin Choi (Electronic Materials Research Center Korea Institute of Science and Technology (KIST)) Jun Young Lee (Electronic Materials Research Center Korea Institute of Science and Technology (KIST)) Jin Soo Park (Bionics Research Center Korea Institute of Science and Technology (KIST)) Sung-Jin Jung (Electronic Materials Research Center Korea Institute of Science and Technology (KIST)) Ho Won Jang (Department of Materials Science and Engineering Research Institute of Advanced Materials) Sung Ok Won (Advanced Analysis and Data Center Korea Institute of Science and Technology (KIST)) Hye Jung Chang (Advanced Analysis and Data Center Korea Institute of Science and Technology (KIST)) Ji-Soo Jang (Electronic Materials Research Center Korea Institute of Science and Technology (KIST)) Kyu Hyoung Lee (Department of Materials Science and Engineering Yonsei University) Byung Chul Lee (Bionics Research Center Korea Institute of Science and Technology (KIST)) Seung-Hyub Baek (Electronic Materials Research Center Korea Institute of Science and Technology (KIST))
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.19 No.2
발행연도
2023.3
수록면
192 - 199 (8page)
DOI
https://doi.org/10.1007/s13391-022-00386-0

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초록· 키워드

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Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronicdevices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patternsof epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructureson Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-offhard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and beselectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia(YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial(La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment toremove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realizationof multifunctional oxide-integrated electronics is provided in this study.

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