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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2016.1
- 수록면
- 768 - 772 (5page)
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초록· 키워드
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The anomalous frequency dispersion of the accumulationcapacitance, i.e. an increase in the accumulation capacitanceat high frequencies, of Pt/Al2O3/InGaAs metal-oxidesemiconductor(MOS) capacitors was investigated in thisstudy. The anomalous frequency dispersion can be attributedto the considerable effects of parasitic inductance at highfrequencies. The effects of parasitic inductance wereeffectively suppressed by decreasing the capacitor areawithout changing the MOS structure. This suggests that asmaller capacitor area should be used to preciselycharacterize the capacitance-voltage behavior of InGaAs-based MOS devices.
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참고문헌 (11)
참고문헌 신청
M. Heyns / 2009 / MRS Bull 34:485
M. Siva Pratap Reddy / 2014 / Electrical Characteristics of TMAH-Surface Treated Ni/Au/Al2O3/GaN MIS Schottky Structures / Electronic Materials Letters 10(2):411~416
M. L. Huang / 2005 / Appl. Phys. Lett 87:252104
A. T. Lucero / 2015 / Electron. Mater. Lett 11:769
H. S. Jin / 2014 / Appl. Surf. Sci 315:178
M. Siva Pratap Reddy / 2014 / Electrical Characteristics of TMAH-Surface Treated Ni/Au/Al2O3/GaN MIS Schottky Structures / Electronic Materials Letters 10(2):411~416
M. L. Huang / 2005 / Appl. Phys. Lett 87:252104
A. T. Lucero / 2015 / Electron. Mater. Lett 11:769
H. S. Jin / 2014 / Appl. Surf. Sci 315:178
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