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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.1
- 수록면
- 192 - 200 (9page)
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Herein, we synthesized uniform Cs 2 SnI 6 fi lms by two kinds of hybrid deposition methods by considering volume expansioninvolved during phase transformations. First, oblique thermal evaporation for CsI followed by SnI 4 spin-coating resultedin uniform Cs 2 SnI 6 fi lms free of impurity phases. The rapid expansion (within 10 s of spin-coating) from CsI to Cs 2 SnI 6( ΔV = 106%) was accommodated by porous CsI fi lms inhibiting crack formation. Excess S nI4 on the C s 2S nI6 after spincoatingwas eff ectively removed by toluene washing without any damages to Cs 2 SnI 6 , and optimum deposition parameterswere suggested in terms of carrier mobility. Second, annealing CsI with SnI 4 vapor at 250 °C and post-annealing in the SnI 4and I 2 vapor at 300 °C produced Cs 2 SnI 6 fi lm with complete coverage. The slow reaction (70 min for a complete conversion)provided suffi cient time for complete diff usion of SnI 4 into CsI without crack formation even with compact CsI. Thenonradiative recombination path in Cs 2 SnI 6 was suppressed by post-annealing in the SnI 4 - and I 2 -atmosphere, as confi rmedfrom the enhanced photoluminescence.
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