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논문 기본 정보

자료유형
학술저널
저자정보
Lijuan Wu (Changsha University of Science and Technology) Jiaqi Chen (Changsha University of Science and Technology) Hang Yang (Changsha University of Science and Technology) QiLin Ding (Changsha University of Science and Technology) Xing Chen (Changsha University of Science and Technology) Shaolian Su (Changsha University of Science and Technology)
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제3호
발행연도
2021.1
수록면
211 - 216 (6page)

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초록· 키워드

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A new structure of extended gate (EG) SJ LDMOS is proposed in this paper to overcome the substrate assisted depletion (SAD) eff ect in the structure of Super-Junction lateral double diff used metal oxide semiconductor (SJ LDMOS). Different from other surface SJ structures, the SJ layer of the structure is located in the body of the drift region. Gate oxide and silicon layer form the EG Structure-Oxide-Semiconductor structure that is similar to Metal?Insulator?Semiconductor capacitor. The the N-drift of the EG structure can obtain the charge compensation to overcome the SAD eff ect, and a nearly rectangular electric field is achieved. In the on-state, the EG structure has two conductive channels and the accumulation layer is formed on the drift region. By accumulating high concentration electrons in the channels, the specifi con-resistance ( R ON,sp ) is greatly reduced. When the drift length is 24 μm, 431.4 V breakdown voltage ( V B ) and 9.8 mΩ cm 2 R ON,sp are achieved, and the fi gure of merit is 18.9 MW cm ?2 .

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