A Ultra-Low Specific On-Resistance and Extended Gate SJ LDMOS Structure

Lijuan Wu; Jiaqi Chen; Hang Yang; QiLin Ding; Xing Chen; Shaolian Su

추천

검색

자료유형: 학술저널

저자정보: Lijuan Wu (Changsha University of Science and Technology) Jiaqi Chen (Changsha University of Science and Technology) Hang Yang (Changsha University of Science and Technology) QiLin Ding (Changsha University of Science and Technology) Xing Chen (Changsha University of Science and Technology) Shaolian Su (Changsha University of Science and Technology)

저널정보: 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제3호

발행연도: 2021.1

수록면: 211 - 216 (6page)

이용수

📌

연구주제

📖

연구배경

🔬

연구방법

🏆

연구결과

초록· 키워드

오류제보하기

A new structure of extended gate (EG) SJ LDMOS is proposed in this paper to overcome the substrate assisted depletion (SAD) eff ect in the structure of Super-Junction lateral double diff used metal oxide semiconductor (SJ LDMOS). Different from other surface SJ structures, the SJ layer of the structure is located in the body of the drift region. Gate oxide and silicon layer form the EG Structure-Oxide-Semiconductor structure that is similar to Metal?Insulator?Semiconductor capacitor. The the N-drift of the EG structure can obtain the charge compensation to overcome the SAD eff ect, and a nearly rectangular electric field is achieved. In the on-state, the EG structure has two conductive channels and the accumulation layer is formed on the drift region. By accumulating high concentration electrons in the channels, the specifi con-resistance ( R ON,sp ) is greatly reduced. When the drift length is 24 μm, 431.4 V breakdown voltage ( V B ) and 9.8 mΩ cm 2 R ON,sp are achieved, and the fi gure of merit is 18.9 MW cm ?2 .

#Substrate assisted depletion (SAD) #Super-junction (SJ) #Extended gate (EG) #Charge compensation #Accumulation layer

참고문헌 (19)

참고문헌 신청

M. Amato / 1985 / Comparison of lateral and vertical DMOS specifi fi c on-resistance / IEDM Tech. Dig :736~773

S. G. Nassif-Khalil / 2003 / Super-junction LDMOST on a silicon-on-sapphire substrate / IEEE Trans. Electron Devices 50(5):1385~1391

X. -B. Chen / 2001 / Optimization of the specifi fi c on-resistance of the COOLMOS / IEEE Trans. Electron Devices 48(2):344~348

B. Zhang / 2016 / Theory and optimization of power superjunction devices / China Sci. Mech. Phys. Astron 46(10):8~25

L. Liang / 2016 / A variation laterl doping layer and lightly doped region compensated superjunction LDMOS / 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) :120~123

함께 읽어보면 좋을 논문

논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!