지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2010.1
- 수록면
- 109 - 112 (4page)
이용수
초록· 키워드
오류제보하기
The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.
목차
등록된 정보가 없습니다.
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
EBE growth and properties of CuInS2 thin film
ICEIC : International Conference on Electronics, Informations and Communications
1993 .08
-
Wafer Size Effect in Chemical Mechanical Polishing (CMP) of Silicon Dioxide (SiO2) Film
대한기계학회 춘추학술대회
2013 .05
-
SYNTHESIS AND CHARACTERIZATION OF NEW HIGH DIELECTRIC (BA$_{0.65}$SR$_{0.35}$)(TI$_{0.65}$ZR$_{0.35}$)O$_3$ FILMS
한국재료학회 학술발표대회
1998 .01
-
Low Temperature Processes of Poly-Si TFT Backplane for Flexible AM-OLEDs
한국정보디스플레이학회 International Meeting
2005 .01
-
Low temperature plasma deposition of microcrystalline silicon films for bottom gate thin film transistors
한국정보디스플레이학회 International Meeting
2006 .01
-
Effect of Room-temperature Ion Energy on PECVD-SiN Films
한국표면공학회 학술발표회 초록집
2008 .06
-
실리콘窒化膜의 氣相成長과 그 電氣的 特性
전기의세계
1979 .09
-
Study the Properties of Silicon Nitride Films prepared by High Density Plasma Chemical Vapor Deposition
한국정보디스플레이학회 International Meeting
2003 .01
-
실리콘 박막의 제조와 특성 평가
한국신·재생에너지학회 학술대회 초록집
2012 .11
-
Residual stress on nanocrystalline silicon thin films deposited with substrate biasing at low temperature
한국정보디스플레이학회 International Meeting
2009 .01
-
Deposition of Plasma Polymerized Films on Silicon Substrates Using Plasma Assisted CVD Method For Low Dielectric Application
한국표면공학회 학술발표회 초록집
2001 .06
-
DEPOSITION OF WIDE BANDGAP SILICON ALLOY FILMS FOR THIN-FILM SILICON SOLAR CELLS BY CONTROLLING CARBON RATIO
AFORE
2015 .11
-
SILICON NANO PARTICLE THIS-FILMS ON GLASS SUBSTRATE BY INDUCTIVELY COUPLED PLASMA FOR THIN FILM SOLAR CELL
AFORE
2011 .11
-
증착온도가 저유전 a-C:F 박막의 특성에 미치는 영향
한국재료학회지
1999 .01
-
Low Temperature Atomic Layer Deposition of Silicon Oxide Films Using Silicon Amide Precursors
한국표면공학회 학술발표회 초록집
2013 .11
-
Plasma Characterization of Facing Target Sputter System for Carbon Nitride Film Deposition
Transactions on Electrical and Electronic Materials
2004 .01
-
Deposition of Silicon Films at Low Temperature with Remote Plasma Enhanced Chemical Vapor Deposition ( RPECVD )
대한전자공학회 학술대회
1996 .01
-
Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted $N_2O$ oxidation for thin film transistors
한국정보디스플레이학회 International Meeting
2006 .01
-
공간 분할 PE-ALD에서 증착된 저온 실리콘 질화물 박막의 Plasma Treatment 특성 연구
대한전자공학회 학술대회
2020 .08
이 논문의 저자 정보
최근 본 자료
댓글(0)
0