용액법으로 제작된 ZnSnO 박막트랜지스터의 전극 물질에 따른 계면 접촉특성 연구

정영민; 송근규; 우규희; 전태환; 정양호; 문주호

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자료유형: 학술저널

저자정보: 정영민 (연세대학교 신소재공학과) 송근규 (연세대학교 신소재공학과) 우규희 (연세대학교 신소재공학과) 전태환 (연세대학교 신소재공학과) 정양호 (연세대학교 신소재공학과) 문주호 (연세대학교 신소재공학과)

저널정보: 한국재료학회 한국재료학회지 한국재료학회지 제20권 제8호

발행연도: 2010.1

수록면: 401 - 407 (7page)

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We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

#zinc tin oxide #metal-semiconductor contact #solution processing #work function #Kelvin probe force microscopy

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