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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.9 No.2
- 발행연도
- 2014.3
- 수록면
- 609 - 614 (6page)
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초록· 키워드
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We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from AlOx, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.
목차
Abstract
1. Introduction
2. Experimental Procedure
3. Results and Discussion
4. Conclusion
References
참고문헌 (30)
참고문헌 신청
1. [학술지(정기간행물)] - N. L. Dehuff / 2005 / Transparent thin-film transistors with zinc indium oxide channel layer / J. Appl. Phys 97 : 064505 ~
2. [학술지(정기간행물)] - J. Liu / 2010 / All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics / J. Am. Chem. Soc 132 : 11934 ~ 11942
3. [학술지(정기간행물)] - A. Dey / 2011 / Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs / Solid State Electron 62 : 19 ~ 24
4. [학술지(정기간행물)] - K. Nomura / 2003 / Room-temperature fabriccation of transparent flexible thin-film transistors using amorphous oxide semiconductors / Nature 432 : 488 ~ 492
5. [학술지(정기간행물)] - Z. Yuan / 2011 / Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors / Thin Solid Films 519 : 3254 ~ 3258
2. [학술지(정기간행물)] - J. Liu / 2010 / All-Amorphous-Oxide Transparent, Flexible Thin-Film Transistors. Efficacy of Bilayer Gate Dielectrics / J. Am. Chem. Soc 132 : 11934 ~ 11942
3. [학술지(정기간행물)] - A. Dey / 2011 / Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs / Solid State Electron 62 : 19 ~ 24
4. [학술지(정기간행물)] - K. Nomura / 2003 / Room-temperature fabriccation of transparent flexible thin-film transistors using amorphous oxide semiconductors / Nature 432 : 488 ~ 492
5. [학술지(정기간행물)] - Z. Yuan / 2011 / Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors / Thin Solid Films 519 : 3254 ~ 3258
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UCI(KEPA) : I410-ECN-0101-2015-500-001097349