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- 학술저널
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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제21권 제3호
- 발행연도
- 2020.1
- 수록면
- 339 - 347 (9page)
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Surface potential and drain current models for a physically based double halo metal–oxide–semiconductor-fi eld-eff ect-transistor(MOSFET) are reported. The proposed models have been established in sub-threshold mode of MOSFET operation. The depletion layer depth used in the pseudo two dimensional Poisson’s equation comprises the effect of two symmetrical pocket implantations at both the ends of the channel region. In this effort, improvement in the investigation is brought in by taking lateral asymmetric channel owing to non-uniform doping. The conventional silicon-dioxide (SiO2) material is replaced with a promising high-k dielectric material hafnium oxide (HfO2) to analyze the surface potential and drain current models. Analytical results have been compared using Synopsys technology computer aided design (TCAD). Excellent conformities between the analytical models and simulations are observed.
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