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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.22 No.5
- 발행연도
- 2022.10
- 수록면
- 376 - 385 (10page)
- DOI
- 10.5573/JSTS.2022.22.5.376
이용수
초록· 키워드
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In this study, we propose a silicon-based metal oxide semiconductor field effect transistor (MOSFET) device for p-type that can operate at a high temperature (at 573 K). This device can be applied to logic circuits, and furthermore, used in semiconductor chips operating in high temperature environments. Through research, we selected 3C-SiC, which can prevent off-current most effectively, as a material to be applied to the device. After that, technology computer aided design (TCAD) simulation will be used to apply the interface characteristics according to the physical properties of silicon and 3CSiC, and to optimize the current characteristics of device as a logic element. In addition, we investigated a complementary metal oxide semiconductor (CMOS) logic circuit with simulation program with integrated circuit emphasis (SPICE) and verify the inverting characteristics in a high temperature environment of 573 K by applying the device of this study.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. DEVICE STRUCTURE
Ⅲ. RESULT & DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (25)
참고문헌 신청
Denis Flandre, “Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits,” Materials Science and Engineering: B, Vol. 29, pp. 7-12, Jan., 1995.
P. L. Dreike, et al, “An overview of high-temperature electronic device technologies and potential applications,” IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, Vol. 17, No. 4, pp. 594-609, Dec., 1994.
Mitch Leslie, “Pandemic Scrambles the Semiconductor Supply Chain,” Engineering, Vol. 9, No. 2, pp. 10-12, Feb., 2022.
R. W. Johnson, et al, “The Changing Automotive Environment: High-Temperature Electronics,” The Changing Automotive Environment: High-Temperature Electronics, Vol. 27, No. 3, pp. 164-176, Jul., 2004.
M. A. Huque, et al, “Silicon-on-Insulator Based High-Temperature Electronics for Automotive Applications,” IEEE International Symposium on Industrial Electronics, pp. 2538-2543, Jun., 2008.
P. L. Dreike, et al, “An overview of high-temperature electronic device technologies and potential applications,” IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, Vol. 17, No. 4, pp. 594-609, Dec., 1994.
Mitch Leslie, “Pandemic Scrambles the Semiconductor Supply Chain,” Engineering, Vol. 9, No. 2, pp. 10-12, Feb., 2022.
R. W. Johnson, et al, “The Changing Automotive Environment: High-Temperature Electronics,” The Changing Automotive Environment: High-Temperature Electronics, Vol. 27, No. 3, pp. 164-176, Jul., 2004.
M. A. Huque, et al, “Silicon-on-Insulator Based High-Temperature Electronics for Automotive Applications,” IEEE International Symposium on Industrial Electronics, pp. 2538-2543, Jun., 2008.
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