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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제21권 제1호
- 발행연도
- 2020.1
- 수록면
- 68 - 73 (6page)
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In this study, hafnium oxide (HfO2 ) thin fi lms were deposited by spin coating technique at diff erent low deposition temperatures (150 °C, 200 °C and 250 °C). The properties of the films were measured by UV–visible spectroscopy, X-ray diff raction and Fourier transform infrared spectroscopy (FTIR) in the attenuated total refl ectance mode. The fi lms exhibit the typical absorption peaks related to Hf–O bonds. Interestingly, a trend is clearly observed between the transmittance, crystallographic planes and FTIR characteristic peaks as deposition temperature increases. Moreover, the fabrication and characterization of MOS capacitors is presented. The current–voltage and capacitance–voltage curves corroborated the trend observed in thecharacterization of the HfO 2 films.
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참고문헌 (43)
참고문헌 신청
M. Dominguez / 2018 / Flexible zinc nitride thinfilm transistors using spin-on glass as gate insulator / IEEE Trans. Electron Devices 65(3):1014~1017
D. Ceresoli / 2006 / Structural and dielectric properties of amorphous ZrO 2 and HfO 2 / Phys. Rev. B 74:125108
S. Vyas / 2018 / A short review on : optimization techniques of ZnO based thin film transistors / Chin. J. Phys 56:117~124
C. Lu / 2016 / Progress in flexible organic thin-film transistors and integrated circuits / Sci. Bull 61(14):1081~1096
M. Dominguez / 2018 / Low-temperature ultrasonic spray deposited aluminum doped zinc oxide film and its application in flexible Metal-Insulator-Semiconductor diodes / Thin Solid Films 645:278~281
D. Ceresoli / 2006 / Structural and dielectric properties of amorphous ZrO 2 and HfO 2 / Phys. Rev. B 74:125108
S. Vyas / 2018 / A short review on : optimization techniques of ZnO based thin film transistors / Chin. J. Phys 56:117~124
C. Lu / 2016 / Progress in flexible organic thin-film transistors and integrated circuits / Sci. Bull 61(14):1081~1096
M. Dominguez / 2018 / Low-temperature ultrasonic spray deposited aluminum doped zinc oxide film and its application in flexible Metal-Insulator-Semiconductor diodes / Thin Solid Films 645:278~281
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