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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.1
- 수록면
- 1,428 - 1,435 (8page)
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The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous (P7þ)and 80 MeV nitrogen (N6þ) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGeHBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ IeV characteristics likeGummel characteristics, excess base current (DIB), net oxide trapped charge (NOX), current gain (hFE),avalanche multiplication (M 1), neutral base recombination (NBR) and output characteristics (IC-VCE)were analysed before and after irradiation. The significant degradation in device parameters wasobserved after 100 MeV P7þ and 80 MeV N6þ ion irradiation. The 100 MeV P7þ ions create more damagein the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more whencompared to 80 MeV N6þ. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from50 C to 400 C in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature andisochronal annealing in total recovery
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참고문헌 (24)
참고문헌 신청
J. D. Cressler / 1998 / SiGe HBT technology : a new contender for Si-based RF and microwave circuit applications / IEEE Trans. Microw. Theory Tech 46:572~589
J. D. Cressler / 2005 / On the potential of SiGe HBTs for extreme environment electronics / Proc. IEEE 93:1559~1582
J. D. Cressler / 2010 / Silicon-germanium as an enabling technology for extreme environment electronics / IEEE Trans. Device Mater. Reliab 10:437~448
백하니 / 2017 / Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation / Nuclear Engineering and Technology 49(1):209~215
A. Bobby / 2015 / Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode / Current Applied Physics 15(11):1500~1505
J. D. Cressler / 2005 / On the potential of SiGe HBTs for extreme environment electronics / Proc. IEEE 93:1559~1582
J. D. Cressler / 2010 / Silicon-germanium as an enabling technology for extreme environment electronics / IEEE Trans. Device Mater. Reliab 10:437~448
백하니 / 2017 / Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation / Nuclear Engineering and Technology 49(1):209~215
A. Bobby / 2015 / Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode / Current Applied Physics 15(11):1500~1505
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