Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation

백하니; 선광민; 김지석; Sy Minh Tuan Hoang; 진미은; 안성호

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자료유형: 학술저널

저자정보: 백하니 선광민 김지석 Sy Minh Tuan Hoang 진미은 안성호

저널정보: 한국원자력학회 Nuclear Engineering and Technology Nuclear Engineering and Technology 제49권 제1호

발행연도: 2017.1

수록면: 209 - 215 (7page)

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Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunchthrough insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30- MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 × 1011 n/cm2. Electrical characteristics such as currentevoltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

#Fast Neutron #NPT-IGBT #Lattice Defect #Recombination Center #Minority Carrier Lifetime #MCLT) #Switching Speed

참고문헌 (16)

참고문헌 신청

A. Guerra / 2000 / Ultra-fast Recovery Diodes Meet Today's Requirements for High Frequency Operation and Power Ratings in SMPS Applications

A. Mogro-Campero / 1985 / Shorter turn-off times in insulated gate transistors by proton implantation / IEEE Electron Device Lett 6 : 224 ~

B. J. Baliga / 1977 / Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers / IEEE Trans. Electron Devices 24 : 985 ~

B. Weis / 1998 / A New Gate Driver Circuit for Improved Turn-off Characteristics of High Current IGBT Modules / Records of IEEE 33rd Annual Industry Applications Conference 2 : 107

B.J. Baliga / 1996 / ModernPower Devices / Wiley : 52 ~

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