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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.25 No.3
- 발행연도
- 2016.5
- 수록면
- 56 - 60 (5page)
이용수
초록· 키워드
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The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of HfO₂ thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of 135℃-350℃. At temperatures higher than 300℃, there was a rapid decrease in the absorption peaks arising from vibration of Sp³ C-H stretching. This showed that the precursors experienced rapid decomposition at around 275℃- 300℃. HfO₂ thin films were successfully deposited by Atomic Layer Deposition (ALD) at 50℃ intervals between 150℃ to 400℃; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiment
Ⅲ. Results and Discussion
Ⅳ. Conclusions
References
참고문헌 (10)
참고문헌 신청
G. D. Wilk, R. M. Wallace, and J. M. Anthony, High-κ gate dielectrics: Current status and materials properties considerations. Journal of applied physics, 89(10), 5243-5275 (2001).
D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors. Chemistry of materials, 14(10), 4350-4358 (2002).
Y. Ohshita, A. Ogura, A. Hoshino, S. Hiiro, and T. Suzuki, and H. Machida, Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition. Thin Solid Films, 406(1), 215-218 (2002).
T. H. Moon, M. H. Ham, M. S. Kim, I. Yun, and J. M. Myoung, Growth and characterization of MOMBE grown HfO2. Applied surface science, 240(1), 105-111 (2005).
X. Liu, S. Ramanathan, and T. E. Seidel, Atomic layer deposition of hafnium oxide thin films from tetrakis (dimethylamino) hafnium (TDMAH) and ozone. In MRS Proceedings (Vol. 765, pp. D3-8). Cambridge University Press (2003).
D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors. Chemistry of materials, 14(10), 4350-4358 (2002).
Y. Ohshita, A. Ogura, A. Hoshino, S. Hiiro, and T. Suzuki, and H. Machida, Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition. Thin Solid Films, 406(1), 215-218 (2002).
T. H. Moon, M. H. Ham, M. S. Kim, I. Yun, and J. M. Myoung, Growth and characterization of MOMBE grown HfO2. Applied surface science, 240(1), 105-111 (2005).
X. Liu, S. Ramanathan, and T. E. Seidel, Atomic layer deposition of hafnium oxide thin films from tetrakis (dimethylamino) hafnium (TDMAH) and ozone. In MRS Proceedings (Vol. 765, pp. D3-8). Cambridge University Press (2003).
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UCI(KEPA) : I410-ECN-0101-2019-420-001276094