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- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2003.1
- 수록면
- 0 - 0 (1page)
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Dielectric thin films of (Pb0.72La0.28)Ti0.93O3(PLT(28)) have been deposited on Pt(111)/Ti/SiO2/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization.We have tried to form the film by a two-step deposition process in order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10-7 A/cm2 for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.
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