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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2009.1
- 수록면
- 808 - 813 (6page)
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Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of N2 to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at 25℃ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of 32.3 cm2/Vsec was observed for the film grown at 400℃.
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참고문헌 (15)
참고문헌 신청
F. Yakuphanoglu / 2004 / The determination of the optical constants of Cu(II)compound having 1-chloro-2,3-0-cyclohexylidinepropane thin film / Opt. Comm. 239 : 275 ~
K. Ikuta / 1998 / Optical and electrical properties of InN thin films grown on ZnO/α-Al2O3 by rf reactive magnetron sputteing / Thin Solid Films 334 : 49 ~
M. L. Tu / 2006 / Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magetron sputtering / J. Appl. Phys. 100 : 053705 ~
Moltan E. M. Goldys / 2002 / Optical and electrical properties of InN grown by radio-frequency reactive sputtering / J. Crys. Growth. 241 : 165 ~
N. Saito / 2001 / Electrical and optical properties of InN films prepared by reactive sputtering / Appl. Surf. Sci. 169 : 349 ~
K. Ikuta / 1998 / Optical and electrical properties of InN thin films grown on ZnO/α-Al2O3 by rf reactive magnetron sputteing / Thin Solid Films 334 : 49 ~
M. L. Tu / 2006 / Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magetron sputtering / J. Appl. Phys. 100 : 053705 ~
Moltan E. M. Goldys / 2002 / Optical and electrical properties of InN grown by radio-frequency reactive sputtering / J. Crys. Growth. 241 : 165 ~
N. Saito / 2001 / Electrical and optical properties of InN films prepared by reactive sputtering / Appl. Surf. Sci. 169 : 349 ~
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