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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
이 논문의 연구 히스토리 (2)
2010
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We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 μm standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.
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등록된 정보가 없습니다.
참고문헌 (9)
참고문헌 신청
E.Fossum / 1997 / CMOS image sensor:Eletronic camera on a chip / IEEE Trans. Elect. Dev 44 (10) : 1689 ~ 1698
M. Bigas / 2006 / Review of CMOS image sensors / Microelectronics Journal 37 : 433 ~ 451
S. H. Seo / 2006 / Highly and variably sensitive complementary metal oxide semiconductor active pixel sensor using P-channel metal oxide semiconductor field effect transistor
S. H. Seo / 2007 / Optical characteristics of an Nwell/ gate-Tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor / Sensors and Materials 19 (7)
S. H. Seo / 2008 / Pseudo 2 transistor active pixel sensor using an N-well/gate-tied P-channel metal oxide semiconductor field effect transistor-type photodetector with built
M. Bigas / 2006 / Review of CMOS image sensors / Microelectronics Journal 37 : 433 ~ 451
S. H. Seo / 2006 / Highly and variably sensitive complementary metal oxide semiconductor active pixel sensor using P-channel metal oxide semiconductor field effect transistor
S. H. Seo / 2007 / Optical characteristics of an Nwell/ gate-Tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor / Sensors and Materials 19 (7)
S. H. Seo / 2008 / Pseudo 2 transistor active pixel sensor using an N-well/gate-tied P-channel metal oxide semiconductor field effect transistor-type photodetector with built
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