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In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by 103 due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence’s Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 ìm 2-poly 4-metal standard CMOS technology.
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참고문헌 (24)
참고문헌 신청
E. A. Vittoz / 1983 / MOS transistors operated in the lateral bipolar mode and their application in CMOS technology / IEEE Journal of Solid-State Circuits 18 (3) : 273 ~ 279
H. S. Wong / 1996 / Technology and device scaling considerations for CMOS imagers / IEEE Transactions on Electron Devices 43 (12) : 2131 ~ 2142
H. Tian / 2001 / Analysis of temporal noise in CMOS photodiode active pixel sensor / Journal of Solid-State Circuits 36 (1) : 92 ~ 101
H. Y. Hyun / 2008 / Low-noise logarithmic active pixel sensor using a gate/n-well-tied PMOSFET-type photodetector / Sensors and Materials 20 : 381 ~ 387
H. Yamamoto / 1996 / Highsensitivity SOI MOS photodetector with self-amplification / Japanese Journal of Applied Physics 35 : 1382 ~ 1386
H. S. Wong / 1996 / Technology and device scaling considerations for CMOS imagers / IEEE Transactions on Electron Devices 43 (12) : 2131 ~ 2142
H. Tian / 2001 / Analysis of temporal noise in CMOS photodiode active pixel sensor / Journal of Solid-State Circuits 36 (1) : 92 ~ 101
H. Y. Hyun / 2008 / Low-noise logarithmic active pixel sensor using a gate/n-well-tied PMOSFET-type photodetector / Sensors and Materials 20 : 381 ~ 387
H. Yamamoto / 1996 / Highsensitivity SOI MOS photodetector with self-amplification / Japanese Journal of Applied Physics 35 : 1382 ~ 1386
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