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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.11 No.6
- 발행연도
- 2016.11
- 수록면
- 1,763 - 1,768 (6page)
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초록· 키워드
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This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two- dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (L<SUB>GS</SUB>) and aperture length (L<SUB>AP</SUB>). We analyze DC and RF parameters inducing on-state current (I<SUB>on</SUB>), threshold voltage (V<SUB>t</SUB>), breakdown voltage (V<SUB>B</SUB>), transconductance (g<SUB>m</SUB>), gate capacitance (C<SUB>gg</SUB>), cut-off frequency (f<SUB>T</SUB>), and maximum oscillation frequency (f<SUB>max</SUB>).
목차
Abstract
1. Introduction
2. Simulation Results and Discussions
3. Conclusion
References
참고문헌 (16)
참고문헌 신청
[학술지(정기간행물)] - Y. Zhang / 2013 / Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors / IEEE Transactions on Election Devices 60 (7) : 2224 ~ 2230
[학술지(정기간행물)] - H. Yu / 2005 / Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts / IEEE Electron Device Lett 26 (5) : 283 ~ 285
[학술지(정기간행물)] - U. K. Mishra / 2008 / GaN-Based RF power devices and amplifiers / Proc. IEEE 96 (2) : 287 ~ 305
[학술지(정기간행물)] - M. Siva Pratap Reddy / 2013 / Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure / JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 13 (5) : 492 ~ 499
[학술지(정기간행물)] - 김성윤 / 2015 / Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope / Journal of Electrical Engineering & Technology 10 (3) : 1131 ~ 1137
[학술지(정기간행물)] - H. Yu / 2005 / Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts / IEEE Electron Device Lett 26 (5) : 283 ~ 285
[학술지(정기간행물)] - U. K. Mishra / 2008 / GaN-Based RF power devices and amplifiers / Proc. IEEE 96 (2) : 287 ~ 305
[학술지(정기간행물)] - M. Siva Pratap Reddy / 2013 / Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure / JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 13 (5) : 492 ~ 499
[학술지(정기간행물)] - 김성윤 / 2015 / Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope / Journal of Electrical Engineering & Technology 10 (3) : 1131 ~ 1137
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UCI(KEPA) : I410-ECN-0101-2017-560-001327611