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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.5
- 발행연도
- 2013.10
- 수록면
- 492 - 499 (8page)
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초록· 키워드
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We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (Fbo) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The Fbo and the series resistance (RS) obtained from Cheung’s method are compared with modified Norde’s method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density (NSS) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density NSS as determined by Terman’s method is found to be 2.14x10<SUP>12</SUP> cm<SUP>-2</SUP> eV<SUP>-1</SUP> for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENTAL TECHNIQUE
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (22)
참고문헌 신청
1. [학술지(정기간행물)] - S. Nakamura / 1996 / InGaN-based multi-quantum-well structure laser diodes / Jpn. J. Appl. Phys. 35 : L74 ~ L76
2. [학술지(정기간행물)] - S. Nakamura / 2003 / Continuous-wave operation of InGaN/GaN/ AlGaN-based laser diodes grown on GaN substrates / Appl. Phys. Lett. 82 (16) : 2014 ~ 2016
3. [학술지(정기간행물)] - J. Bardeen / 1947 / Surface states and rectification at a metal semiconductor contact / Phys. Rev. 71 (10) : 717 ~ 727
4. [단행본] - S. M. Sze / 1981 / Physics of Semiconductor Devices / Wiley & Son
5. [단행본] - E. H. Rhoderick / 1988 / Metal- Semiconductor Contacts / Clarendon Press
2. [학술지(정기간행물)] - S. Nakamura / 2003 / Continuous-wave operation of InGaN/GaN/ AlGaN-based laser diodes grown on GaN substrates / Appl. Phys. Lett. 82 (16) : 2014 ~ 2016
3. [학술지(정기간행물)] - J. Bardeen / 1947 / Surface states and rectification at a metal semiconductor contact / Phys. Rev. 71 (10) : 717 ~ 727
4. [단행본] - S. M. Sze / 1981 / Physics of Semiconductor Devices / Wiley & Son
5. [단행본] - E. H. Rhoderick / 1988 / Metal- Semiconductor Contacts / Clarendon Press
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UCI(KEPA) : I410-ECN-0101-2014-560-002740989