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High Reliable GaAs HBT with InGaP Ledge Emitter Structure
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외부 베이스표면을 에미터 ledge로 포장한 InGaP / GaAs HBT의 신뢰도 향상

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Type
Academic journal
Author
Journal
The Korean Society Of Computer And Information Journal of the Korea Society of Computer and Information Vol.5 No.4 KCI Accredited Journals
Published
2000.12
Pages
102 - 105 (4page)

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Result
High Reliable GaAs HBT with InGaP Ledge Emitter Structure
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Abstract· Keywords

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The self-aligned AlGaAs/GaAs HBTs with the mesa-etched emitter showed severe degradation in current gain under stress. The cause was identified to be due to instability of the surface states on extrinsic base. In this paper, the surface states were diminished by the hetero-passivation of the InGaP ledge emitter and the reliability was drastically improved. The activation energy of current gain degradation was extracted to be 1.97eV and MTTF to be 4.8×108 at 140℃ which has satisfied MIL standards.

Contents

요약

Abstract

Ⅰ. 서론

Ⅱ. 소자제작과 실험

Ⅲ. 결과 및 검토

Ⅳ. 결론

참고문헌

저자소개

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