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Design of High Performance LNA Based on InGaP/GaAs HBT for 5.4 GHz WLAN Band Applications
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InGaP/GaAs HBT를 이용한 5.4GHz 대역의 고성능 초고주파 집적회로 저잡음 증폭기 설계

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Type
Academic journal
Author
Journal
Korea Electromagnetic Engineering Society The Journal of Korean Institute of Electromagnetic Engineering and Science Vol.15 No.7 (WN.86) KCI Accredited Journals
Published
2004.7
Pages
713 - 721 (9page)

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Design of High Performance LNA Based on InGaP/GaAs HBT for 5.4 GHz WLAN Band Applications
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This paper presents a high perfonnance LNA based on InGaP/GaAs HBT for 5.4 GHz WLAN band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InGaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is designed and fabricated. The LNA is integrated in areal' of 0.9×0.9㎟ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13 dB gain, 2.1 dB noise figure, and excellent linearity in terms of IIP3 of 5.5 dBm.


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요약

Abstract

1. 서론

2. 회로 설계

3. 실험 및 결과 고찰

4. 결론

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References (15)

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, 2003. , Nonlinear Microwave and RF Circuits google schola , sep.1989. , GaAs heterojuction bipolar transistor device and IC technology for high performance analog and microwave applications mtt-37 : 1286 ~ 1303 google schola , oct.1989. , low dc power GaAs HBT broadband amplifiers to 11 GHz : 79 ~ 82 google schola , 1987. , Buried-channel GaAs MESFETs with improved small-signal characteristics : 163 ~ 166 google schola , 1998. , The Design of CMOS Radio- Frequency Integrated Circuits google schola

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