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논문 기본 정보

자료유형
학술저널
저자정보
Mi-Song Kim (Korea Electronics Technology Institute) Won Sik Hong (Korea Electronics Technology Institute) Yong-Mo Kim (Korea Instrument)
저널정보
대한용접·접합학회 대한용접·접합학회지 大韓熔接·接合學會誌 第41卷 第6號
발행연도
2023.12
수록면
558 - 565 (8page)

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초록· 키워드

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In this study, to improve the bonding interfacial characteristics of active metal brazing (AMB) substrates, a Ag-Cu-Ti brazing filler metal (BFM) layer was formed on aluminum nitride (AlN) and silicon nitride (Si₃N₄) ceramics by nano sputtering. The AMB substrates were manufactured by brazing bonding. The measured peel strengths of the bonding interfaces of the AlN and Si3N4 ceramics were 2.35 kgf/mm and 4.26 kgf/mm, respectively. Fracture surface analysis revealed AlN crack initiation at the ceramic/BFM interface, which progressed into the ceramic interior. Silicon carbide (SiC) devices for a power module were bonded on the AMB substrates by Sn-3.0Ag-0.5Cu soldering and Ag sintering bonding. To compare the deterioration characteristics of the joint interfaces, a thermal shock test was conducted. Microstructural analysis after the thermal shock test showed that no defects occurred at the Si3N4/BFM interface, whereas delamination occurred at the AlN/BFM interface. Summarizing, in this study, the characteristics of AMB interfaces coated with a Ag-Cu-Ti BFM using the sputtering process were identified and the suitability of a SiC-based power module package was confirmed.

목차

Abstract
1. Introduction
2. Experimental Method
3. Experiment Results
4. Conclusion
References

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