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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전자파학회JEES Journal of Electromagnetic Engineering And Science Journal of Electromagnetic Engineering And Science Vol.23 No.3
- 발행연도
- 2023.5
- 수록면
- 233 - 243 (11page)
이용수
초록· 키워드
오류제보하기
Behavioral models of common mode (CM) electromagnetic interference (EMI) are proposed herein for a GaN high-electron-mobility transistor (HEMT) synchronous buck converter. First, a CM noise model is developed using a linear equivalent circuit that consists of a voltage source, current source, and two noise impedances. The behavioral parameters of the CM model are then extracted by changing the input-side shunt impedances. A GaN HEMT buck converter setup is then built using switching frequencies of 100 kHz, 200 kHz, and 500 kHz to verify the validity of the CM EMI behavioral model. A comparison between the experimental and predicted results indicated that the proposed CM EMI model of GaN-based power converters was able to predict well the CM EMI current in the 150 kHz–30 MHz frequency range.
목차
Abstract
I. INTRODUCTION
II. CM EMI BEHAVIORAL MODEL
III. CM EMI BEHAVIORAL MODELING PROCEDURE
IV. EXTRACTION OF CM EMI BEHAVIORAL MODEL PARAMETERS
V. CM EMI MODEL VALIDATION
VI. CM EMI PREDICTION UNDERDIFFERENT SWITCHING FREQUENCIES
VII. CONCLUSION
REFERENCES
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