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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2015.11
- 수록면
- 1,489 - 1,498 (10page)
이용수
초록· 키워드
오류제보하기
Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal–oxide–semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.
목차
Abstract
I. INTRODUCTION
II. GAN-BASED POWER DEVICES
III. SIMULATION OF SYNCHRONOUS BOOST CONVERTER
IV. EXPERIMENTAL TESTS ON THE GAN- BASED SYNCHRONOUS BOOST CONVERTER
V. DISCUSSION AND SUGGESTIONS
VI. CONCLUSION
REFERENCES
참고문헌 (24)
참고문헌 신청
[학술지(정기간행물)] - Chunyang Gu / 2014 / A Medium-Voltage Matrix Converter Topology for Wind Power Conversion with Medium Frequency Transformers / Journal of Power Electronics 14 (6) : 1166 ~ 1177
[학술지(정기간행물)] - H. Yoo / 2008 / System integration and power-flow management for a series hybrid electric vehicle using supercapacitors and batteries / IEEE Trans. Power Electron. 44 (1) : 108 ~ 114
[학술지(정기간행물)] - J. Shin / 2013 / Low-common mode voltage H-bridge converter with additional switch legs / IEEE Trans. Power Electron 28 (4) : 1773 ~
[학술지(정기간행물)] - U. K. Mishra / 2008 / GaN-based RF power devices and amplifiers / Proc. IEEE 96 (2) : 287 ~ 305
[학술대회논문] - N. Kaminski / 2009 / State of the art and the future of wide band-gap devices / Proc. IEEE Power Electron. Appl. : 1 ~ 9
[학술지(정기간행물)] - H. Yoo / 2008 / System integration and power-flow management for a series hybrid electric vehicle using supercapacitors and batteries / IEEE Trans. Power Electron. 44 (1) : 108 ~ 114
[학술지(정기간행물)] - J. Shin / 2013 / Low-common mode voltage H-bridge converter with additional switch legs / IEEE Trans. Power Electron 28 (4) : 1773 ~
[학술지(정기간행물)] - U. K. Mishra / 2008 / GaN-based RF power devices and amplifiers / Proc. IEEE 96 (2) : 287 ~ 305
[학술대회논문] - N. Kaminski / 2009 / State of the art and the future of wide band-gap devices / Proc. IEEE Power Electron. Appl. : 1 ~ 9
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