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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제4호
- 발행연도
- 2021.8
- 수록면
- 467 - 472 (6page)
- DOI
- https://doi.org/10.1007/s42341-020-00251-7
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At nanoscale along with the failure of Metal oxide semiconductor field-effect transistor due to short channel effects, Silicon has raised as another bottleneck for researchers. In the last couple of decades, researchers have provided diff erent solutions in the form of Graphene and Transition Metal Dichalcogenides materials. Each Graphene and Transition Metal Dichalcogenides has its own set of disadvantages like poor I ON /I OFF ratio and lower carrier mobility and hence cannot be used individually. In this article, a tub type metal oxide semiconductor field-effect transistor is designed and for application of the device in a low power VLSI domain, the back-gated technique is used. Different device properties are studied first with a Silicon-based channel and then a Silicon-Tungsten Disulphide heterojunction channel. The selection of SiO2 as a gate insulator and contact material is also justified. This article shows that instead of using conventional Silicon-based devices it is better to use heterojunction devices, as they offer much lower OFF-state current and better linearity properties.
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참고문헌 (8)
참고문헌 신청
S. O. Koswatta / 2009 / D.E. performance comparison between tunneling transistors and conventional MOSFETS / IEEE Trans Electron Devices 56(3):456~465
J. P. Colinge / 2010 / Nanowire transistors without junctions / Nat Nanotechnol 5(3):225~229
Naveen Kumar / 2020 / Low voltage charge-plasma based dopingless Tunnel Field Effect Transistor: analysis and optimization / Microsystem Technologies 26(4):1343~1350
M. Jagadesh Kumar / 2013 / Doping-less tunnel fi eld eff ect transistor : design and investigation / IEEE Trans Electron Devices 60(10):3285~3290
N. Kumar / 2019 / Design and investigation of charge-plasma based work function engineered dualmetal-heterogeneous gate SiSi0.55Ge0.45 GAA-cylindrical NWTFET for ambipolar analysis / IEEE Trans Electron Devices 66(3):1468~1474
J. P. Colinge / 2010 / Nanowire transistors without junctions / Nat Nanotechnol 5(3):225~229
Naveen Kumar / 2020 / Low voltage charge-plasma based dopingless Tunnel Field Effect Transistor: analysis and optimization / Microsystem Technologies 26(4):1343~1350
M. Jagadesh Kumar / 2013 / Doping-less tunnel fi eld eff ect transistor : design and investigation / IEEE Trans Electron Devices 60(10):3285~3290
N. Kumar / 2019 / Design and investigation of charge-plasma based work function engineered dualmetal-heterogeneous gate SiSi0.55Ge0.45 GAA-cylindrical NWTFET for ambipolar analysis / IEEE Trans Electron Devices 66(3):1468~1474
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