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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제19권 제3호
- 발행연도
- 2018.6
- 수록면
- 215 - 217 (3page)
- DOI
- https://doi.org/10.1007/s42341-018-0035-7
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초록· 키워드
오류제보하기
Typically, a parallel circuit model is used to explain the electrical resistivity of oxide-metal-oxide (OMO) multilayers; such amodel treats the top, middle, and bottom sublayers independently. However, in the case of semiconductor?metal-semiconductormultilayer systems, this model is not applicable; according to the theory of metal-semiconductor contact, carrier diff usionarising from the diff erence in the work functions of the materials should also be considered. In this paper, we investigatethe eff ect of carrier diff usion on the electrical properties by changing the thickness of both the top and bottom oxide layers.
We fi nd that adjusting the thickness of the oxide sublayers realizes direct control of the carrier density in OMO multilayers.
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