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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.27 No.5
- 발행연도
- 2018.9
- 수록면
- 109 - 112 (4page)
- DOI
- 10.5757/ASCT.2018.27.5.109
이용수
초록· 키워드
오류제보하기
Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity (I<SUB>ex</SUB>)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the I<SUB>ex</SUB> dependence show that the PL intensities increase with increasing I<SUB>ex</SUB>. The enhancement factors (k) of PL increment as a function of I<SUB>ex</SUB> are 3.3 and 1.22 at low and high Iex regime, respectively. The high k value at low Iex, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental details
Ⅲ. Results and discussion
Ⅳ. Conclusions
References
참고문헌 (16)
참고문헌 신청
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