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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.26 No.4
- 발행연도
- 2017.7
- 수록면
- 86 - 90 (5page)
이용수
초록· 키워드
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We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of E<SUB>a1</SUB> and E<SUB>a2</SUB> for the InAs QDs were obtained 48 ± 3 meV and 229 ± 23 meV, respectively. It was considered that the values of E<SUB>a1</SUB> and E<SUB>a2</SUB> are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiment Details
Ⅲ. Results and Discussion
Ⅳ. Conclusions
Reference
참고문헌 (15)
참고문헌 신청
J. Lee and D. Lee, J. Korean Phys. Soc. 58, 239 (2011).
E. T. Kim, Z. Chen, and A. Madhukar, J. Korean Phys. Soc. 49, S837 (2006).
R. P. Smith, Im S. Han, and Jong S. Kim, J. Korean Phys. Soc. 64, 895 (2014).
T. V. Hakkarainen, J. Tommila, A. Schramm, A. Tukiainen, R. Ahorinta, M. Dumitrescu, and M Guina, Nanotech. 22, 295604 (2011).
I. Kamiya, T. Shirasaka, K. Shimomura, and D. M. Tex, J. Cryst. Growth 323, 219 (2011).
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