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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2016.1
- 수록면
- 323 - 327 (5page)
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We report a Ti-TiOx/CdSe-ZnS core-shell quantum dot based bipolar nonvolatileresistive memory device. The device exhibits an ON/OFF ratio of 100 and isreproducible. The memory device showed good retention characteristics understress and excellent stability even after 100,000 cycles of switching operation. The switching speed measured was around 15 ns. The devices are solutionprocessed at room temperature in ambient atmosphere. The operating mechanismis discussed based on charge trapping in quantum dots resulting in the Coulombblockade effect with a ZnS shell layer and metal-oxide layer acting as the barrierto confine the trapped charges. The proposed mechanism is validated by a threeterminal device designed exclusively for this purpose.
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