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논문 기본 정보

자료유형
학술저널
저자정보
Ishika U. Shah (Shivaji University) Snehal L. Patil (Shivaji University) Sushilkumar A. Jadhav (Shivaji University) Tukaram D. Dongale (Shivaji University) Rajanish K. Kamat (Shivaji University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.20 No.4
발행연도
2024.7
수록면
381 - 392 (12page)
DOI
https://doi.org/10.1007/s13391-024-00495-y

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Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabricationof a resistive switching device using Magnetite-Polyaniline (Fe3O4-PANI) nanocomposite. The device showed goodnon-volatile memory properties and can mimic neuromorphic synaptic behavior. Initially, Fe3O4nanoparticles were synthesizedusing the co-precipitation method and PANI by oxidative polymerization and their nanocomposites of differentcompositions were prepared and fully characterized. The 10% Fe3O4-PANI-based RS device outperforms all others in termsof I–V switching performance. Furthermore, the optimized device (10% Fe3O4-PANI) has tuneable I–V characteristics. Thedevice demonstrated excellent analog switching at ± 1.5 V and digital switching at ± 2.5 V. The memristive behavior of theAg/10% Fe3O4-PANI/FTO device was confirmed by the pinched hysteresis loop in the I–V curves at different voltages, aswell as the double-valued charged-flux characteristics. The device has good cycle-to-cycle reliability for switching voltagesand switching currents, as demonstrated by the Weibull distribution and other statistical measures. Moreover, the device canretain memory states up to 6 × 103s and shows a switching stability of 2 × 104cycles. The device also showed linear potentiationand depression characteristics and mimicked excitatory post-synaptic current (EPSC) and paired-pulse facilitation (PPF)index properties similar to its biological counterpart. According to the charge transport model fitting results, the Ohmic andChild’s square laws dominated in both analog and digital switching processes, and RS occurs due to the filamentary process.

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