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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국과학기술원 정보전자연구소 IDEC Journal of Integrated Circuits and Systems IDEC Journal of Integrated Circuits and Systems Vol.6 No.4
- 발행연도
- 2020.1
- 수록면
- 17 - 22 (6page)
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This paper presents a Ka-band linear CMOS power amplifier (PA) with a parallel power combiner using single-winding transformer to increase the output power with low loss in 65nm CMOS technology for fifth generation (5G) applications. Two differential cascode unit PAs are combined with the proposed parallel power combiner as a current combining topology. Compared with the conventional transformer power combining techniques, the proposed parallel power combiner can offer high output power with a compact die area. Upon simulation with a 28 GHz continuous-wave signal, the proposed PA achieves a saturated output power (PSAT) of 25.0 dBm, output 1-dB compression power (PO,1dB) of 22.6 dBm, and peak power added efficiency (PAE) of 34.7%, respectively. A power gain of 28.1 dB is achieved with a 3 dB bandwidth of 5 GHz. This PA achieves one of the highest figures-of-merit (FOM) among the recently reported 5G millimeter-wave (mm-wave) PAs in CMOS.
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참고문헌 (27)
참고문헌 신청
S. Pornpromlikit / 2010 / A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS / IEEE Trans. Microw. Theory Tech 58(1):57~64
H. Dabag / 2013 / Analysis and design of stacked-FET millimeter-wave power amplifiers / IEEE Trans. Microw. Theory Tech 61(4):1543~1556
J. A. Jayamon / 2016 / Multigate-cell stacked FET design for millimeter-wave CMOS power amplifiers / IEEE J. Solid-State Circuits 51(9):2027~2037
W. Tai / 2013 / A 0. 7 W fully integrated 42 GHz power amplifier with 10% PAE in 0. 13 m SiGe BiCMOS / Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers :142~143
W. Tai / 2014 / A W-band 21.1 dBm power amplifier with an 8-way zero-degree combiner in 45 nm SOI CMOS / Proc. IEEE MTT-S Int. Microw. Symp. Dig :1~3
H. Dabag / 2013 / Analysis and design of stacked-FET millimeter-wave power amplifiers / IEEE Trans. Microw. Theory Tech 61(4):1543~1556
J. A. Jayamon / 2016 / Multigate-cell stacked FET design for millimeter-wave CMOS power amplifiers / IEEE J. Solid-State Circuits 51(9):2027~2037
W. Tai / 2013 / A 0. 7 W fully integrated 42 GHz power amplifier with 10% PAE in 0. 13 m SiGe BiCMOS / Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers :142~143
W. Tai / 2014 / A W-band 21.1 dBm power amplifier with an 8-way zero-degree combiner in 45 nm SOI CMOS / Proc. IEEE MTT-S Int. Microw. Symp. Dig :1~3
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