지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.19 No.4
- 발행연도
- 2019.8
- 수록면
- 357 - 363 (7page)
- DOI
- 10.5573/JSTS.2019.19.4.357
이용수
초록· 키워드
오류제보하기
A fully integrated Watt-level broadband power amplifier for 6.0~7.1 GHz applications in a 2-μm GaAs HBT technology is presented in this paper. The power amplifier is implemented using paralleled sixteen transistors as main amplifier, to obtain high output power. In order to increase the bandwidth of the PA, two L-networks are adopted as the output matching network, and T-type matching network is used as input matching network. The broadband power amplifier has a small-signal gain of > 12 dB at 6.6 GHz, and saturation output power of 29.5~31.4 dBm (0.89~1.38 W) at 6.0~7.1 GHz with a maximum power added efficiency of 41.6% at 6.5 GHz. The power amplifier occupies 1.26 ㎟ (including pads).
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. CIRCUIT DESIGN
Ⅲ. MEASURED RESULTS
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (24)
참고문헌 신청
Tai W, Carley L R, Ricketts D S. A 0.7W fully integrated 42GHz power amplifier with 10% PAE in 0.13 μm SiGe BiCMOS. 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013: 142-143
Griffith Z, Urteaga M, Rowell P. A 190-GHz highgain, 3-dBm OP1dB low DC-power amplifier in 250-nm InP HBT. IEEE Microwave and Wireless Components Letters, 2017, 27(12): 1128-1130
Lin H C, Rebeiz G M. A 70?80-GHz SiGe amplifier with peak output power of 27.3 dBm. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(7): 2039-2049
Meghdadi M, Medi A. Design of 6?18-GHz highpower amplifier in GaAs pHEMT technology. IEEE Transactions on Microwave Theory and Techniques, 2017, 65(7): 2353-2360
Nguyen D P, Pham T, Pham A V. A 28-GHz symmetrical doherty power amplifier using stacked-FET cells. IEEE Transactions on Microwave Theory and Techniques, 2018, 66(6): 2628-2637
Griffith Z, Urteaga M, Rowell P. A 190-GHz highgain, 3-dBm OP1dB low DC-power amplifier in 250-nm InP HBT. IEEE Microwave and Wireless Components Letters, 2017, 27(12): 1128-1130
Lin H C, Rebeiz G M. A 70?80-GHz SiGe amplifier with peak output power of 27.3 dBm. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(7): 2039-2049
Meghdadi M, Medi A. Design of 6?18-GHz highpower amplifier in GaAs pHEMT technology. IEEE Transactions on Microwave Theory and Techniques, 2017, 65(7): 2353-2360
Nguyen D P, Pham T, Pham A V. A 28-GHz symmetrical doherty power amplifier using stacked-FET cells. IEEE Transactions on Microwave Theory and Techniques, 2018, 66(6): 2628-2637
함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
차량 레이더용 77GHz 전력 증폭기 구현
한국정보기술학회논문지
2018 .09
-
GaAs HBT 공정 기반의 6 - 7 ㎓ 전력증폭기 설계
대한전자공학회 학술대회
2022 .06
-
6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
[ETRI] ETRI Journal
2017 .10
-
Design of a Load Modulated Balanced Amplifier with a Two-Stage Control Power Amplifier
Journal of Electromagnetic Engineering And Science
2023 .05
-
1.9-GHz CMOS Power Amplifier using Adaptive Biasing Technique at AC Ground
Journal of information and communication convergence engineering
2019 .12
-
Design Study of a 240-GHz Amplifier Frequency Doubler Chain Based on SiGe BiCMOS Technology
IDEC Journal of Integrated Circuits and Systems
2024 .07
-
상호 결합된 차동인덕터를 이용한 GaAs HBT 공정 기반의 1.9 GHz~2.6 GHz 광대역 선형 전력증폭기 설계
한국전자파학회논문지
2021 .07
-
0.1 μm GaAs pHEMT 공정을 활용한 W-대역 구동 및 전력 증폭기
전기학회논문지
2023 .07
-
Split Slant-End Stubs for the Design of Broadband Efficient Power Amplifiers
Journal of Electromagnetic Engineering And Science
2016 .01
-
GaAs HBT 공정을 이용한 주파수 분배 방식의 광대역 구동증폭기 설계
한국인터넷방송통신학회 논문지
2019 .01
-
2.6 GHz GaN-HEMT Power Amplifier MMIC for LTE Small-Cell Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2016 .06
-
Sub 6Ghz GaAs 고효율 전력 증폭기에 관한 연구
한국통신학회 학술대회논문집
2022 .06
-
A Transformer-Matched Millimeter-Wave CMOS Power Amplifier
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2016 .10
-
광대역 J급 증폭기의 설계
한국정보기술학회논문지
2020 .03
-
Linearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier
전기전자학회논문지
2019 .06
-
A Ka-band Power Amplifier with On-chip Power Detector in 0.15 μm GaAs pHEMT Technology
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2022 .12
-
고지향성 스피커를 위한 새로운 전력 증폭기 설계
전기학회논문지
2017 .08
-
고선형 HBT 전력증폭기 설계를 위한 비선형 Gm 및 sweet spot 추출
대한전자공학회 학술대회
2022 .06
-
65-nm CMOS 공정을 이용한 24 GHz 전력증폭기 설계
한국전자파학회논문지
2016 .10
-
37.5% High Efficiency Class D Power Amplifier for 2.4GHz Bluetooth Low Energy applications
대한전자공학회 학술대회
2019 .11
이 논문의 저자 정보
이 논문과 함께 이용한 논문
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2019-569-000961863