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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전자파학회JEES Journal of Electromagnetic Engineering And Science Journal of Electromagnetic Engineering And Science Vol.16 No.3
- 발행연도
- 2016.7
- 수록면
- 143 - 149 (7page)
이용수
초록· 키워드
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This work presents a method used for designing a broadband class-E power amplifier that combines the two techniques of a nonlinear shunt capacitance and a low quality factor of a series resonator. The nonlinear shunt capacitance theory accurately extracts the value of class-E components. In addition, the quality factor of the series resonator was considered to obtain a wide bandwidth for the power amplifiers. The purpose of using this method was to produce a simple topology and a high efficiency, which are two outstanding features of a class-E power amplifier. The experimental results show that a design was created using from a 130 to 180 MHz frequency with a bandwidth of 32% and a peak measured power added efficiency of 84.8%. This prototype uses an MRF282SR1 MOSFET transistor at a 3-W output power level. Furthermore, a summary of the experimental results compared with other high-efficiency articles is provided to validate the advantages of this method.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. CURCUIT ANALYSIS AND PARAMETERS
Ⅲ. BROADBAND CLASS-E PAS WITH A LOW Q RESONANCE
Ⅳ. CIRCUIT DESIGN AND MEASUREMENT
Ⅴ. CONCLUSION
REFERENCES
참고문헌 (19)
참고문헌 신청
[학술지(정기간행물)] - N. O. Sokal / 1975 / Class E: a new class of high efficiency tuned single-ended switching power amplifiers / IEEE Journal of Solid-State Circuits 10 (3) : 168 ~ 176
[학술지(정기간행물)] - T. Suetsugu / 2004 / Analysis and design of class E amplifier with shunt capacitance composed of nonlinear and linear shunt capacitances / IEEE Transactions on Circuits and Systems I 51 (7) : 1261 ~ 1268
[학술지(정기간행물)] - X. Wei / 2011 / Design of class-E amplifier with MOSFET linear gate-to-drain and nonlinear drain-to-source capacitances / IEEE Transactions on Circuits and Systems I 58 (10) : 2556 ~ 2565
[학술지(정기간행물)] - A. Mediano / 2007 / Design of class E amplifier with nonlinear and linear shunt capacitance for any duty cycle / IEEE Transactions on Microwave Theory and Techniques 55 (3) : 484 ~ 492
[학술지(정기간행물)] - M. J. Chudobiak / 1994 / The use of the parasitic nonlinear capacitors in class-E amplifiers / IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 41 (12) : 941 ~ 944
[학술지(정기간행물)] - T. Suetsugu / 2004 / Analysis and design of class E amplifier with shunt capacitance composed of nonlinear and linear shunt capacitances / IEEE Transactions on Circuits and Systems I 51 (7) : 1261 ~ 1268
[학술지(정기간행물)] - X. Wei / 2011 / Design of class-E amplifier with MOSFET linear gate-to-drain and nonlinear drain-to-source capacitances / IEEE Transactions on Circuits and Systems I 58 (10) : 2556 ~ 2565
[학술지(정기간행물)] - A. Mediano / 2007 / Design of class E amplifier with nonlinear and linear shunt capacitance for any duty cycle / IEEE Transactions on Microwave Theory and Techniques 55 (3) : 484 ~ 492
[학술지(정기간행물)] - M. J. Chudobiak / 1994 / The use of the parasitic nonlinear capacitors in class-E amplifiers / IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 41 (12) : 941 ~ 944
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