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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제21권 제4호
- 발행연도
- 2020.1
- 수록면
- 384 - 393 (10page)
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The photovoltaic characteristics of a mechanically and monolithic stacked tandem solar cell of the heterojunction InGaP/GaAs and Ge sub cells, were numerically simulated under 1-sun air mass 1.5 global spectrum (AM1.5G) at ambient temperature (300 K) using the two-dimensional device simulator Silvaco?Atlas. Our tandem structure consists of a thin upper cell with heterojunction of indium and gallium phosphide on gallium arsenide ( In 0.49 Ga 0.51 P/GaAs ), on a relatively thick germanium ( Ge ) substrate which acts as a lower cell in order to obtain good performances of such a structure. We studied both cells, stacked mechanically (four terminal:4T) and monolithic (two terminal:2T) using Silvaco ATLAS Virtual Wafer FabricationTool. First, we have simulated the single InGaP/GaAs and Ge solar cells with fi xed thicknesses at 1.4 μm and 210 μm respectively. They presented a conversion effi ciencies (??) of 30.32% and 10.96% respectively. The effi ciency of mechanically stacked tandem solar is 30.96% and short current density of 26.16 mA/cm 2 which is limited by the lower short current density of both sub-cells. Using the method of current matching, by varying the base thicknesses of the InGaP/GaAs top and Ge bottom sub-cells, the numerical simulation results presented a matched maximum current J sc value of 29.12 mA/cm 2 obtained at base thicknesses of 0.605 and 209.9 μ m for the InGaP/GaAs top and Ge bottom sub-cells respectively, leading to a high power conversion effi ciency (??) of the mechanically stacked sub cells of 34.77%, the open-circuit voltage and the fi ll factor are 1.329 V and 88.96%, respectively. Next, the sub-cells were interconnected with tunnel junctions (TJs), p - GaAs/n - GaAs to allow carrier transport, the results of the monolithic stacked sub-cells are converged with results of themechanically stacked sub-cells, and are represented in the following results of the tandem cell: power conversion effi ciency (??) of 32.96%, the open-circuit voltage of 1.343 V, the short current of 29.19 mA/cm 2 and the fi ll factor of 84.05%.
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참고문헌 (34)
참고문헌 신청
A. Blakers / 2013 / High effi ciency silicon solar cells / Energy Procedia 33:1~10
M. A. Green / 2019 / Solar cell effi ciency tables(version 54) / Prog. Photovolt. Res. Appl 27(7):565~575
H. Bencherif / 2016 / Improving the effi ciency of a-Si : H/c-Si thin heterojunction solar cells by using both antirefl ection coating engineering and diff raction grating / Optik 182:682~693
M. David / 2016 / Internal luminescence effi ciencies in InGaP/GaAs/Ge triple-junction solar cells evaluated from photoluminescence through optical coupling between subcells / Sci. Rep 6:38297
F. Bouzid / 2017 / Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode / Jpn. J. Appl. Phys 56(9):094301
M. A. Green / 2019 / Solar cell effi ciency tables(version 54) / Prog. Photovolt. Res. Appl 27(7):565~575
H. Bencherif / 2016 / Improving the effi ciency of a-Si : H/c-Si thin heterojunction solar cells by using both antirefl ection coating engineering and diff raction grating / Optik 182:682~693
M. David / 2016 / Internal luminescence effi ciencies in InGaP/GaAs/Ge triple-junction solar cells evaluated from photoluminescence through optical coupling between subcells / Sci. Rep 6:38297
F. Bouzid / 2017 / Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode / Jpn. J. Appl. Phys 56(9):094301
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