메뉴 건너뛰기
Library Notice
Institutional Access
If you certify, you can access the articles for free.
Check out your institutions.
ex)Hankuk University, Nuri Motors
Log in Register Help KOR
Subject

Pd/graphene gate HEMT-based NO₂ gas sensor
Recommendations
Search
Questions

Pd/graphene gate HEMT 기반 이산화질소(NO₂) 가스 센서

논문 기본 정보

Type
Proceeding
Author
DaHee Kim (아주대학교) Woosuk Choi (아주대학교) Seongho Hong (아주대학교) Junseok Heo (아주대학교)
Journal
The Institute of Electronics and Information Engineers 대한전자공학회 학술대회 2021년도 대한전자공학회 하계종합학술대회 논문집
Published
2021.6
Pages
87 - 92 (6page)

Usage

cover
📌
Topic
📖
Background
🔬
Method
🏆
Result
Pd/graphene gate HEMT-based NO₂ gas sensor
Ask AI
Recommendations
Search
Questions

Abstract· Keywords

Report Errors
The catalytic metal-based nitrogen dioxide (NO₂) gas sensors have good adsorption of gas, but their desorption occurs at high temperatures. Thus they show an extremely slow recovery at room temperatures and high temperature operation is preferred. In this study, a unique gate structure of a graphene and catalytic metal (Pd) was employed to demonstrate the HEMT-based nitrogen dioxide gas sensor with a high NO₂ response and fast recovery. The Pd nanoisland structure was formed on graphene to maximize the surface through which nitrogen dioxide can react with the catalytic metal. Above all, when electron hole pairs are generated in graphene by irradiation with ultraviolet or visible light, oxygen ions adsorbed on the gate are oxidized to oxygen, and desorption is possible with a small amount of thermal energy. Thus, a nitrogen dioxide sensor having a high response of 2,430 and a fast recovery time of <100 s at room temperature was experimentally demonstrated.

Contents

Abstract
I. 서론
II. 소자 구조 및 원리
Ⅲ. 제작 및 특성
Ⅳ. 결론 및 향후 연구 방향
참고문헌

References (0)

Add References

Recommendations

It is an article recommended by DBpia according to the article similarity. Check out the related articles!

Related Authors

Frequently Viewed Together

Recently viewed articles

Comments(0)

0

Write first comments.