Phonons and Valence-band Splitting in Strained GaAs1-xNx/GaAs Epilayers

Tae Soo Jeong; Hyeoncheol Kim; Sukill Kang; Kyu-Hwan Shim; Taek Sung Kim

doi:10.5573/JSTS.2021.21.3.206

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자료유형: 학술저널

저자정보: Tae Soo Jeong (Jeonbuk National University) Hyeoncheol Kim (Jeonbuk National University) Sukill Kang (Jeonbuk National University) Kyu-Hwan Shim (Jeonbuk National University) Taek Sung Kim (Jeonbuk National University)

저널정보: 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.21 No.3

발행연도: 2021.6

수록면: 206 - 214 (9page)

DOI: 10.5573/JSTS.2021.21.3.206

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The strain effects in strained GaAs1-xNx epilayers are characterized by Raman spectroscopy and photocurrent spectra at various nitrogen composition. In addition, the nitrogen composition and the strain were determined by using high-resolution X-ray diffraction (HR-XRD). The Raman spectra are observed to be dominated by the GaAs-like longitudinal optical (LO) phonon mode as the strongest peaks show up around 289~294 cm-1. Moreover, the weak and broad peaks features in the range of 255~276 cm-1 originate from the peaks of GaAs-like transverse optical (TO) phonon mode and disorder induced, GaN-like LO. And the Raman peak shifts toward lower wave number with increasing nitrogen compositions, which is indicates the presence of tensile strain in the strained GaAs1-xNx epilayers. The valence-band splitting of GaAs1-xNx are obtained from photocurrent spectra. As the nitrogen concentration increases, the tensile strain in strained GaAs1-xNx epilayers increases while the valence-band splitting increases.

#Phonon #band splitting #strain #GaAsN

참고문헌 (23)

참고문헌 신청

H.-C. Yu, et al, “Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow”, Applied Physics Express, Vol. 4, No. 1, P.012103, Dec., 2010.

T. Kitatani, et al, “A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K”, Japanese Journal of Applied Physics, Vol. 39, No. 2A, pp. L 86–L 87, Feb., 2000.

T. W. Kim, et al, “Impact of growth temperature and substrate orientation on dilute-nitrideantimonide materials grown by MOVPE for multijunction solar cell application”, Journal of Crystal Growth, Vol. 405, No. 1, PP.87-91, Nov., 2014.

S. Turcotte, et al, “Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001)”, Journal of Applied Physics, Vol. 104, No. 8, P. 083511, Jun., 2008.

J. Sik, et al, “Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry”, Journal of Applied Physics, Vol. 89, No.1, PP.294-305, Jan., 2001.

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