지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
오류제보하기
In photovoltaic power generation where minority carrier generation via light absorption is competing against minority carrier recombination, the substrate thickness and material quality are interdependent, and appropriate combination of the two variables is important in obtaining the maximum output power generation. Medici, a two-dimensional semiconductor device simulation tool, is used to investigate the interdependency in relation to the maximum power output in front-lit Si solar cells. Qualitatively, the results indicate that a high quality substrate must be thick and that a low quality substrate must be thin in order to achieve the maximum power generation in the respective materials. The dividing point is $70{\mu}m/5{\times}10^{-6}sec$. That is, for materials with a minority carrier recombination lifetime longer than $5{\times}10^{-6}sec$, the substrate must be thicker than $70{\mu}m$, while for materials with a lifetime shorter than $5{\times}10^{-6}sec$, the substrate must be thinner than $70{\mu}m$. In substrate fabrication, the thinner the wafer, the lower the cost of material, but the higher the cost of wafer fabrication. Thus, the optimum thickness/lifetime combinations are defined in this study along with the substrate cost considerations as part of the factors to be considered in material selection.
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참고문헌 (6)
참고문헌 신청
M. A. Green / 2007 / Prog. Photovolt. Res. Appl 15:35
J. H. Kim / 2008 / Electron. Telecommun. Res. Inst. 23:2
F. Dimorth / 2007 / MRS Bull 32:230
1996 / Medici Two-Dimensional Device Simulation Program, Ver. 2.2, User's Manual, vol. 3 / Technology Modeling Associates, Inc. :1~10
K. S. Choe / 2010 / Solid State Sci 12:1948
J. H. Kim / 2008 / Electron. Telecommun. Res. Inst. 23:2
F. Dimorth / 2007 / MRS Bull 32:230
1996 / Medici Two-Dimensional Device Simulation Program, Ver. 2.2, User's Manual, vol. 3 / Technology Modeling Associates, Inc. :1~10
K. S. Choe / 2010 / Solid State Sci 12:1948
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