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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제21권 제3호
- 발행연도
- 2020.1
- 수록면
- 258 - 266 (9page)
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The paper was studied the damage effect mechanism of proton radiation on metallic interconnect, where the metal electron migration was caused by space ion irradiation. A physical transfer model of via was constructed, where the equivalent distribution parameters circuit structure was extracted. The parameters of the electromagnetic eff ect of copper via interconnects were calculated under diff erent irradiation dose rates. The study showed the result of the influence on via length of the eff ective transmission signal, the infl uence of radiation on the characteristic impedance, and the effect of radiation on the failure of via, which could provide a theoretical instruction to enhance the anti-TID ability.
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참고문헌 (16)
참고문헌 신청
R. Bai / 2017 / Study on irradiation properties of ZIRLO alloy irradiated by Ni ion irradiation / Nucl. Phys. Rev 34(3):630~635
C. Long / 2016 / Temperature dependence of fl ectance and irradiation of the ground metallic target / Chin. J. Lumin 37(12):1566~1570
D. Ming / 2010 / The Study on the Reliability and Failure Mechanism of Copper Interconnection in VDSM
Y. Tao / 2015 / Sputtering Behavior of Divertor Materials in Tokamak
Y. -J. He / 2016 / Total dose dependence of hot carrier injection eff ect in the n-channel metal oxide semiconductor devices / Acta Phys. Sin 65(24):246101
C. Long / 2016 / Temperature dependence of fl ectance and irradiation of the ground metallic target / Chin. J. Lumin 37(12):1566~1570
D. Ming / 2010 / The Study on the Reliability and Failure Mechanism of Copper Interconnection in VDSM
Y. Tao / 2015 / Sputtering Behavior of Divertor Materials in Tokamak
Y. -J. He / 2016 / Total dose dependence of hot carrier injection eff ect in the n-channel metal oxide semiconductor devices / Acta Phys. Sin 65(24):246101
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