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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.29 No.2
- 발행연도
- 2020.3
- 수록면
- 23 - 27 (5page)
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This research investigates the plasma characteristics of an inductively coupled plasma discharge which is widely used in semiconductor fabrication processes. Three-dimensional non-symmetric geometry, which contains four discontinuous gas inlet ports and a unique antenna shape with individual power input and grounded output part, is assumed. Fluid-based simulation is performed to reduce the amount of computation that increases with the three-dimensional structure. Ar is used as a reaction gas to simplify the physics. For comparison to increase accuracy in calculating the power induced to the plasma chamber, the capacitive electric field is calculated besides the usual inductive electric field; the impedance of the system is calculated from a field definition based on Poynting’s theorem.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
참고문헌 (15)
참고문헌 신청
T. Novikova / 2003 / J. Appl. Phys 93:3198
J. Hopwood / 1993 / J. Vac. Sci. Technol. A 11:152
M. A. Lieberman / 1994 / Principles of Plasma Discharges and Materials Processing / Wiley
T. Makabe / 2006 / Plasma Electronics: Applications in Microelectronic Device Fabrication / Taylor and Francis
S. S. Kim / 2000 / Appl. Phys. Lett 77:492
J. Hopwood / 1993 / J. Vac. Sci. Technol. A 11:152
M. A. Lieberman / 1994 / Principles of Plasma Discharges and Materials Processing / Wiley
T. Makabe / 2006 / Plasma Electronics: Applications in Microelectronic Device Fabrication / Taylor and Francis
S. S. Kim / 2000 / Appl. Phys. Lett 77:492
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